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Model IRS2108PBF
Description MOSFET 和 IGBT 栅极驱动器，半桥，Infineon Infineon 系列高电压端和低电压端半桥 MOSFET 和 IGBT 栅极驱动器 IC 栅极驱动电源范围从 6 V 到 20 V CMOS 施密特触发器输入 两个独立的栅极驱动器 匹配的传播延迟，用于两个通道 输出相位，带输入 无铅，符合 RoHS ### MOSFET 和 IGBT 驱动器，Infineon (International Rectifier)
Product QR code
Brand: Infineon
Packaging PDIP-8
Delivery time
Packaging method Tube
Standard packaging quantity 1
33.46  yuan 33.46yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8015) Minimum order quantity(1)
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Technical parameters/power supply voltage (DC):

10.0V (min)

 

Technical parameters/rated power:

1 W

 

Technical parameters/rise/fall time:

100ns, 35ns

 

Technical parameters/number of output interfaces:

2

 

Technical parameters/output voltage:

600 V

 

Technical parameters/output current:

290.600 mA

 

Technical parameters/number of channels:

2

 

Technical parameters/dissipated power:

1 W

 

Technical parameters/rise time:

220 ns

 

Technical parameters/descent time:

80 ns

 

Technical parameters/descent time (Max):

80 ns

 

Technical parameters/rise time (Max):

220 ns

 

Technical parameters/operating temperature (Max):

125 ℃

 

Technical parameters/operating temperature (Min):

-40 ℃

 

Technical parameters/dissipated power (Max):

1000 mW

 

Technical parameters/power supply voltage:

10V ~ 20V

 

Technical parameters/power supply voltage (Max):

20 V

 

Technical parameters/power supply voltage (Min):

10 V

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

PDIP-8

 

Dimensions/Length:

10.92 mm

 

Dimensions/Width:

7.11 mm

 

Dimensions/Height:

5.33 mm

 

Dimensions/Packaging:

PDIP-8

 

Physical parameters/operating temperature:

-40℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

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