Technical parameters/forward voltage: | 1.1V @1A |
|
Technical parameters/forward current: | 1 A |
|
Technical parameters/Maximum forward surge current (Ifsm): | 30 A |
|
Technical parameters/forward voltage (Max): | 1.1 V |
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Technical parameters/forward current (Max): | 1 A |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | EDIP-4 |
|
Dimensions/Packaging: | EDIP-4 |
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Physical parameters/operating temperature: | 150 ℃ |
|
Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
Customs information/ECCN code: | EAR99 |
|
Customs information/HTS code: | 8541100080 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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EIC | 功能相似 | 4 |
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DIYI Electronic | 功能相似 | DB-M |
BRIDGE RECTIFIERS 0.8 to 1.5A
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Diodes | 功能相似 | DB-1 |
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Good-Ark Electronics | 功能相似 | DF |
BRIDGE RECTIFIERS 0.8 to 1.5A
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DB107G
|
GeneSiC Semiconductor | 功能相似 | EDIP-4 |
GENESIC SEMICONDUCTOR DB107G Bridge Rectifier Diode, Single, 1000V, 1A, DIP, 1.1V, 4Pins
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DB107G
|
Taiwan Semiconductor | 功能相似 | In-Line |
GENESIC SEMICONDUCTOR DB107G Bridge Rectifier Diode, Single, 1000V, 1A, DIP, 1.1V, 4Pins
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Zowie Technology | 功能相似 |
GENESIC SEMICONDUCTOR DB107G Bridge Rectifier Diode, Single, 1000V, 1A, DIP, 1.1V, 4Pins
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