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Alternative material

Technical parameters/rated voltage (DC):	60.0 V
Technical parameters/rated current:	500 mA
Technical parameters/number of pins:	3
Technical parameters/polarity:	NPN
Technical parameters/dissipated power:	200 mW
Technical parameters/breakdown voltage (collector emitter):	60 V
Technical parameters/Maximum allowable collector current:	0.5A
Technical parameters/minimum current amplification factor (hFE):	120
Technical parameters/maximum current amplification factor (hFE):	390
Technical parameters/rated power (Max):	200 mW
Technical parameters/DC current gain (hFE):	120
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	200 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-323
Dimensions/Length:	2.1 mm
Dimensions/Width:	1.35 mm
Dimensions/Height:	0.9 mm
Dimensions/Packaging:	SOT-323
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/06/15
Customs information/ECCN code:	EAR99

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	2SC5876FRAT106Q	ROHM Semiconductor	完全替代	SOT-323	ROHM 2SC5876FRAT106Q 单晶体管双极, NPN, 60 V, 300 MHz, 200 mW, 500 mA, 120 hFE 新	PDF

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