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Description INFINEON IR2104SPBF 双路芯片, MOSFET, 高压侧和低压侧, 10V-20V电源, 360mA输出, 150ns延迟, SOIC-8
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Brand: Infineon
Packaging SOIC-8
Delivery time
Packaging method Each
Standard packaging quantity 1
8.92  yuan 8.92yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(7637) Minimum order quantity(1)
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Technical parameters/rated power:

625 mW

 

Technical parameters/rise/fall time:

100ns, 50ns

 

Technical parameters/number of output interfaces:

2

 

Technical parameters/output voltage:

620 V

 

Technical parameters/output current:

210 mA

 

Technical parameters/number of pins:

8

 

Technical parameters/dissipated power:

0.625 W

 

Technical parameters/Static current:

150 µA

 

Technical parameters/rise time:

100 ns

 

Technical parameters/descent time:

50 ns

 

Technical parameters/descent time (Max):

90 ns

 

Technical parameters/rise time (Max):

170 ns

 

Technical parameters/operating temperature (Max):

125 ℃

 

Technical parameters/operating temperature (Min):

-40 ℃

 

Technical parameters/dissipated power (Max):

625 mW

 

Technical parameters/power supply voltage:

10V ~ 20V

 

Technical parameters/power supply voltage (Max):

20 V

 

Technical parameters/power supply voltage (Min):

10 V

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC-8

 

Dimensions/Length:

5 mm

 

Dimensions/Width:

4 mm

 

Dimensions/Height:

1.5 mm

 

Dimensions/Packaging:

SOIC-8

 

Physical parameters/operating temperature:

-40℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Each

 

Other/Manufacturing Applications:

Consumer Electronics, Alternative Energy, Industrial, Consumer Electronics, Industrial, Alternative Energy, Power Management, Power Ma

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Alternative material

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