Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 0.036 Ω |
|
Technical parameters/polarity: | P-Channel |
|
Technical parameters/dissipated power: | 136 W |
|
Technical parameters/rise time: | 160 ns |
|
Technical parameters/descent time: | 100 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-252 |
|
Dimensions/Packaging: | TO-252 |
|
Physical parameters/operating temperature: | -50℃ ~ 175℃ |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | Industrial, industry |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/06/15 |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1043
|
Vishay Intertechnology | 功能相似 |
Fixed Resistor, Metal Glaze/thick Film, 0.75W, 430ohm, 400V, 5% +/-Tol, 200ppm/Cel, Surface Mount, 2010, CHIP, HALOGEN FREE AND ROHS COMPLIANT
|
|||
SUD50P10-43-E3
|
Vishay Semiconductor | 类似代替 |
MOSFET P-CH 100V 38A TO252
|
|||
SUD50P10-43-E3
|
Vishay Siliconix | 类似代替 | TO-252-3 |
MOSFET P-CH 100V 38A TO252
|
||
SUD50P10-43L-GE3
|
Vishay Semiconductor | 功能相似 | TO-252-2 |
Power Field-Effect Transistor, 36.4A I(D), 100V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2
|
||
SUD50P10-43L-GE3
|
VISHAY | 功能相似 | TO-252-2 |
Power Field-Effect Transistor, 36.4A I(D), 100V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review