Technical parameters/power supply voltage (DC): | 3.30 V, 3.60 V (max) |
|
Technical parameters/digits: | 8 |
|
Technical parameters/access time: | 10.0 ns |
|
Technical parameters/memory capacity: | 8000000 B |
|
Technical parameters/access time (Max): | 10 ns |
|
Technical parameters/operating temperature (Max): | 85 ℃ |
|
Technical parameters/operating temperature (Min): | -40 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 44 |
|
Encapsulation parameters/Encapsulation: | TSOP |
|
Dimensions/Packaging: | TSOP |
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Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Tray |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Customs information/ECCN code: | 3A991.b.2.a |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CY14B108K-ZS25XI
|
Cypress Semiconductor | 功能相似 | TSOP-44 |
CY14B108K 系列 8 M (1024 K x 8) 3.6 V 25 ns 表面贴装 nvSRAM - TSOP-44
|
||
CY7C1059DV33-10ZSXI
|
Cypress Semiconductor | 功能相似 | TSOP-44 |
RAM，Cypress Semiconductor ### SRAM（静态随机存取存储器）
|
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