Technical parameters/operating voltage: | 128 V |
|
Technical parameters/breakdown voltage: | 143 V |
|
Technical parameters/clamp voltage: | 207 V |
|
Technical parameters/peak pulse power: | 1500 W |
|
Technical parameters/minimum reverse breakdown voltage: | 143 V |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | DO-214AB |
|
Dimensions/Length: | 7.11 mm |
|
Dimensions/Width: | 6.22 mm |
|
Dimensions/Height: | 2.62 mm |
|
Dimensions/Packaging: | DO-214AB |
|
Physical parameters/operating temperature: | -65℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | Automotive grade |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1.5SMC150A-E3/57T
|
Vishay Semiconductor | 完全替代 | DO-214AB-2 |
TRANSZORB® 瞬态电压抑制器轴向单向 1500W,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
||
1.5SMC150A-E3/57T
|
VISHAY | 完全替代 | DO-214AB |
TRANSZORB® 瞬态电压抑制器轴向单向 1500W,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
||
1.5SMC150A-M3/57T
|
Vishay Semiconductor | 完全替代 | DO-214AB |
Diode TVS Single Uni-Dir 128V 1.5kW 2Pin SMC T/R
|
||
1.5SMC150AHE3/9AT
|
Vishay Semiconductor | 完全替代 | DO-214AB |
Diode TVS Single Uni-Dir 128V 1.5kW 2Pin SMC T/R
|
||
|
|
VISHAY | 完全替代 | DO-214AB |
Diode TVS Single Uni-Dir 128V 1.5kW 2Pin SMC T/R
|
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