Technical parameters/peak pulse power: | 1500 W |
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Technical parameters/minimum reverse breakdown voltage: | 9.5 V |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | DO-201AA |
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Dimensions/Packaging: | DO-201AA |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Manufacturing Applications: | Automotive grade |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1.5KA10AHE3/54
|
VISHAY | 完全替代 | DO-201AA |
DIODE 1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 1.5kA, 2Pin, Transient Suppressor
|
||
1.5KA10AHE3/54
|
Vishay Semiconductor | 完全替代 | DO-201AA |
DIODE 1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 1.5kA, 2Pin, Transient Suppressor
|
||
|
|
VISHAY | 完全替代 | DO-201AA |
1500W 10V Uni Directional Through Hole Transient Voltage Suppressor Diode
|
||
1.5KE10A-E3/51
|
Vishay Semiconductor | 完全替代 | DO-201AA |
1500W 10V Uni Directional Through Hole Transient Voltage Suppressor Diode
|
||
1N6271A-E3/54
|
Vishay Semiconductor | 完全替代 | DO-201AA |
TRANSZORB® 瞬态电压抑制器轴向单向 1500W,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
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