Technical parameters/dissipated power: | 750 W |
|
Technical parameters/output power: | 350 W |
|
Technical parameters/breakdown voltage (collector emitter): | 80 V |
|
Technical parameters/gain: | 8.32 dB |
|
Technical parameters/rated power (Max): | 350 W |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Encapsulation parameters/installation method: | Chassis |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | Ceramic-2 |
|
Dimensions/Packaging: | Ceramic-2 |
|
Physical parameters/operating temperature: | 200℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PH10
|
M/A-Com | 功能相似 |
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT, HERMETIC SEALED, CERAMIC PACKAGE-2
|
|||
PH10
|
Vishay Sfernice | 功能相似 |
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT, HERMETIC SEALED, CERAMIC PACKAGE-2
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review