Technical parameters/drain source resistance: | 180 mΩ |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 3.1 W |
|
Technical parameters/threshold voltage: | 1 V |
|
Technical parameters/drain source voltage (Vds): | 20 V |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | SC-75 |
|
Dimensions/Packaging: | SC-75 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMMA511DJ-T1-GE3
|
Vishay Semiconductor | 功能相似 | SC-70 |
MOSFET N/P-CH 12V 4.5A SC70-6L
|
||
SMMB911DK-T1-GE3
|
Vishay Siliconix | 功能相似 | SC-75-6L |
MOSFET 2P-CH 20V 2.6A SC75-6L
|
||
SMMB911DK-T1-GE3
|
Vishay Semiconductor | 功能相似 | SC-75 |
MOSFET 2P-CH 20V 2.6A SC75-6L
|
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