Technical parameters/wavelength: | 940 nm |
|
Technical parameters/perspective: | 20° |
|
Technical parameters/peak wavelength: | 940 nm |
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Technical parameters/dissipated power: | 100 mW |
|
Technical parameters/output power: | 100 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 30 V |
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Technical parameters/rated power (Max): | 100 mW |
|
Technical parameters/descent time: | 15 µs |
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Technical parameters/descent time (Max): | 10000 ns |
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Technical parameters/rise time (Max): | 10000 ns |
|
Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
|
Technical parameters/dissipated power (Max): | 100 mW |
|
Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | T-1 |
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Dimensions/Length: | 4 mm |
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Dimensions/Width: | 4 mm |
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Dimensions/Height: | 5.25 mm |
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Dimensions/Packaging: | T-1 |
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Physical parameters/operating temperature: | -40℃ ~ 85℃ (TA) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PT380
|
Sharp | 功能相似 | T-1 |
Phototransistor IR Chip 800nm 2Pin T-1
|
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