Encapsulation parameters/installation method: | Through Hole |
|
Physical parameters/medium materials: | Tantalum |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
M39003/01-2365
|
Vishay Semiconductor | 完全替代 | Through Hole |
3.3uF ±10% 50V Φ4.7mm 12.04mm
|
||
|
|
Cornell Dubilier Electronics | 完全替代 |
3.3uF ±10% 50V Φ4.7mm 12.04mm
|
|||
|
|
Vishay Sprague | 完全替代 | Through Hole |
3.3uF ±10% 50V Φ4.7mm 12.04mm
|
||
|
|
Cornell Dubilier Electronics | 完全替代 |
3.3uF ±10% 50V Φ4.7mm 12.04mm
|
|||
M39003/01-2605
|
Vishay Semiconductor | 完全替代 | Through Hole |
3.3uF ±10% 50V Φ4.7mm 12.04mm
|
||
|
|
VISHAY | 完全替代 | Axial |
3.3uF ±10% 50V Φ4.7mm 12.04mm
|
||
M39003/01-2605
|
KEMET Corporation | 完全替代 | Metal |
3.3uF ±10% 50V Φ4.7mm 12.04mm
|
||
|
|
Vishay Sprague | 完全替代 |
3.3uF ±10% 50V Φ4.7mm 12.04mm
|
|||
M39003/01-2845
|
Vishay Semiconductor | 完全替代 | Through Hole |
3.3uF ±10% 50V Φ4.7mm 12.04mm
|
||
M39003/01-2845
|
KEMET Corporation | 完全替代 | Metal |
3.3uF ±10% 50V Φ4.7mm 12.04mm
|
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