Technical parameters/frequency: | 0Hz ~ 8GHz |
|
Technical parameters/power supply current: | 55 mA |
|
Technical parameters/number of channels: | 1 |
|
Technical parameters/dissipated power: | 339 mW |
|
Technical parameters/gain: | 15 dB |
|
Technical parameters/testing frequency: | 8 GHz |
|
Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/dissipated power (Max): | 339 mW |
|
Technical parameters/power supply voltage: | 5 V |
|
Package parameters/number of pins: | 16 |
|
Encapsulation parameters/Encapsulation: | VFQFN-16 |
|
Dimensions/Height: | 0.95 mm |
|
Dimensions/Packaging: | VFQFN-16 |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | Milcom, Aerospace and Defense |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HMC311LP3
|
Hittite | 功能相似 | QFN-16 |
RF Amplifier InGaP HBT Gain Block amp SMT, DC - 6GHz
|
||
HMC311LP3
|
ADI | 功能相似 | QFN-16 |
RF Amplifier InGaP HBT Gain Block amp SMT, DC - 6GHz
|
||
HMC311LP3ETR
|
Hittite | 功能相似 | QFN-16 |
RF Amplifier InGaP HBT Gain Block amp SMT, DC - 6GHz
|
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