Technical parameters/dissipated power: | 13 W |
|
Technical parameters/Leakage source breakdown voltage: | 15 V |
|
Technical parameters/breakdown voltage of gate source: | 12 V |
|
Technical parameters/Continuous drain current (Ids): | 2.50 A |
|
Technical parameters/gain: | 9.5 dB |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | CHIP |
|
Dimensions/Packaging: | CHIP |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NE8500295-4
|
California Eastern Laboratories | 功能相似 |
Trans JFET 15V 2.5A GaAs MESFET
|
|||
|
|
NEC | 功能相似 | CHIP |
Trans JFET 15V 2.5A GaAs MESFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review