Technical parameters/polarity: | N-CH |
|
Technical parameters/drain source voltage (Vds): | 30 V |
|
Technical parameters/Continuous drain current (Ids): | 3.5A |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOP |
|
Dimensions/Packaging: | SOP |
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Other/Product Lifecycle: | Obsolete |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Fairchild | 功能相似 | SOP |
3.5A , 30V ,额定雪崩,逻辑电平,双N沟道LittleFET⑩增强型功率MOSFET 3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel LittleFET⑩ Enhancement Mode Power MOSFET
|
||
RF1K49088
|
Intersil | 功能相似 |
3.5A , 30V ,额定雪崩,逻辑电平,双N沟道LittleFET⑩增强型功率MOSFET 3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel LittleFET⑩ Enhancement Mode Power MOSFET
|
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