Technical parameters/dissipated power: | 250000 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 1250 V |
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Technical parameters/rated power (Max): | 250 W |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 250000 mW |
|
Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-3-3 |
|
Dimensions/Height: | 18.9 mm |
|
Dimensions/Packaging: | TO-3-3 |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FGA20S125P-SN00336
|
ON Semiconductor | 功能相似 | TO-3-3 |
1250V, 20A, Shorted-anode IGBT, 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED, 450/RAIL
|
||
FGA20S125P_SN00336
|
ON Semiconductor | 完全替代 | TO3PN03A |
Trans IGBT Chip N-CH 1.25kV 40A 3Pin TO-3PN Rail
|
||
FGA20S125P_SN00336
|
Fairchild | 完全替代 | TO-3-3 |
Trans IGBT Chip N-CH 1.25kV 40A 3Pin TO-3PN Rail
|
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