Chip AI consultant
Technical parameters/drain source voltage (Vds): | 100 V |
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Encapsulation parameters/Encapsulation: | TO-220 |
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Dimensions/Packaging: | TO-220 |
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Other/Product Catalog: | MOS(Field Effect Transistor |
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Other/continuous drain current (Id) (at 25 ° C): | 140A(Tc) |
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Other/leakage source voltage (Vdss): | 100V |
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Other/Gate Source Threshold Voltage: | 4V @ 250uA |
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Other/leakage source conduction resistance: | 7.5 mΩ @ 70A,10V |
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Other/Type: | N channel |
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Other/maximum power dissipation (Ta): | 285W(Tc) |
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Other/Product Code: | C357982 |
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Other/Packaging Specifications: | TO-220FB-3L |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
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