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Description INFINEON IPB067N08N3GATMA1 晶体管, MOSFET, N沟道, 80 A, 80 V, 0.0055 ohm, 10 V, 2.8 V
Product QR code
Brand: Infineon
Packaging TO-263
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
5.84  yuan 5.84yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(9791) Minimum order quantity(1)
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Technical parameters/rated power:

136 W

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.0055 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

136 W

 

Technical parameters/threshold voltage:

2.8 V

 

Technical parameters/drain source voltage (Vds):

80 V

 

Technical parameters/Continuous drain current (Ids):

80A

 

Technical parameters/rise time:

66 ns

 

Technical parameters/Input capacitance (Ciss):

2890pF @40V(Vds)

 

Technical parameters/descent time:

8 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

136 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-263

 

Dimensions/Length:

10.31 mm

 

Dimensions/Width:

9.45 mm

 

Dimensions/Height:

4.57 mm

 

Dimensions/Packaging:

TO-263

 

Physical parameters/operating temperature:

-55℃ ~ 175℃

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Alternative Energy, LED lighting, automotive, Communications& Networking, LED Lighting, Power management, alternative energy, communication and networking, Motor Drive& Control, Automotive, Power Management, Motor Drive and Control, Consumer Electronics

 

Compliant with standards/RoHS standards:

 

Compliant with standards/lead standards:

Lead Free

 

Com

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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