Technical parameters/rise time: | 35 ns |
|
Technical parameters/Input capacitance (Ciss): | 1300pF @40V(Vds) |
|
Technical parameters/descent time: | 5 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 79 W |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-252-3 |
|
Dimensions/Length: | 6.73 mm |
|
Dimensions/Width: | 6.223 mm |
|
Dimensions/Height: | 2.413 mm |
|
Dimensions/Packaging: | TO-252-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPD12CNE8NG
|
Infineon | 功能相似 | TO-252 |
OptiMOS®2功率三极管 OptiMOS㈢2 Power-Transistor
|
||
IPD135N08N3GBTMA1
|
Infineon | 类似代替 | TO-252-3 |
DPAK N-CH 80V 45A
|
||
IPD16CNE8NG
|
Infineon | 功能相似 | TO-252 |
OptiMOS®2功率三极管 OptiMOS㈢2 Power-Transistor
|
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