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Model IRFD9010PBF
Description TRANSISTOR 1100mA, 50V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, HVMDIP, 4Pin, FET General Purpose Small Signal
Product QR code
Brand: Vishay Siliconix
Packaging DIP-4
Delivery time
Packaging method Tube
Standard packaging quantity 1
4.87  yuan 4.87yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3580) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

-50.0 V

 

Technical parameters/rated current:

-1.10 A

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

1W (Tc)

 

Technical parameters/drain source voltage (Vds):

50 V

 

Technical parameters/Leakage source breakdown voltage:

-50.0 V

 

Technical parameters/Continuous drain current (Ids):

-1.10 A

 

Technical parameters/Input capacitance (Ciss):

240pF @25V(Vds)

 

Technical parameters/rated power (Max):

1 W

 

Technical parameters/dissipated power (Max):

1W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

4

 

Encapsulation parameters/Encapsulation:

DIP-4

 

Dimensions/Length:

6.29 mm

 

Dimensions/Width:

5 mm

 

Dimensions/Height:

3.37 mm

 

Dimensions/Packaging:

DIP-4

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRFD9010 IRFD9010 Vishay Semiconductor 完全替代 DIP
MOSFET P-CH 50V 1.1A 4-DIP
PDF
IRFD9010 IRFD9010 Infineon 完全替代 HexDIP
MOSFET P-CH 50V 1.1A 4-DIP

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