Technical parameters/polarity: | N-CH |
|
Technical parameters/drain source voltage (Vds): | 250 V |
|
Technical parameters/Continuous drain current (Ids): | 0.79A |
|
Technical parameters/rise time: | 7.6 ns |
|
Technical parameters/Input capacitance (Ciss): | 140pF @25V(Vds) |
|
Technical parameters/descent time: | 7 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 2000 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | SOT-223 |
|
Dimensions/Packaging: | SOT-223 |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFL214
|
IRF | 完全替代 |
MOSFET N-CH 250V 790mA SOT223
|
|||
IRFL214
|
International Rectifier | 完全替代 | SOT-223 |
MOSFET N-CH 250V 790mA SOT223
|
||
IRFL214
|
VISHAY | 完全替代 | SOT-223 |
MOSFET N-CH 250V 790mA SOT223
|
||
IRFL214PBF
|
VISHAY | 完全替代 | SOT-223 |
MOSFET N-CH 250V 790mA SOT223
|
||
IRFL214PBF
|
Vishay Siliconix | 完全替代 | TO-261-4 |
MOSFET N-CH 250V 790mA SOT223
|
||
IRFL214PBF
|
Vishay Intertechnology | 完全替代 | TO-261 |
MOSFET N-CH 250V 790mA SOT223
|
||
IRFL214PBF
|
International Rectifier | 完全替代 | SOT-223 |
MOSFET N-CH 250V 790mA SOT223
|
||
IRFL214PBF
|
LiteOn | 完全替代 | SOT-223-3 |
MOSFET N-CH 250V 790mA SOT223
|
||
IRFL214TRPBF
|
VISHAY | 完全替代 | TO-261-4 |
MOSFET N-CH 250V 790mA SOT223
|
||
|
|
Vishay Intertechnology | 完全替代 | TO-261 |
MOSFET N-CH 250V 790mA SOT223
|
||
IRFL214TRPBF
|
Vishay Semiconductor | 完全替代 | SOT-223 |
MOSFET N-CH 250V 790mA SOT223
|
||
IRFL214TRPBF
|
International Rectifier | 完全替代 | SOT-223 |
MOSFET N-CH 250V 790mA SOT223
|
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