Technical parameters/drain source resistance: | 200 mΩ |
|
Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 25 W |
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Technical parameters/drain source voltage (Vds): | 50 V |
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Technical parameters/Continuous drain current (Ids): | 8.20 A |
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Technical parameters/rise time: | 33 ns |
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Technical parameters/Input capacitance (Ciss): | 250pF @25V(Vds) |
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Technical parameters/rated power (Max): | 25 W |
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Technical parameters/descent time: | 23 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 25000 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Packaging Methods: | Tube |
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Other/Minimum Packaging: | 2000 |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR010
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 50V 8.2A DPAK
|
|||
IRFR010
|
IRF | 完全替代 |
MOSFET N-CH 50V 8.2A DPAK
|
|||
IRFR010
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET N-CH 50V 8.2A DPAK
|
||
IRFR010
|
International Rectifier | 完全替代 | TO-252 |
MOSFET N-CH 50V 8.2A DPAK
|
||
IRFR010TR
|
International Rectifier | 完全替代 | TO-252 |
MOSFET N-CH 50V 8.2A DPAK
|
||
IRFR010TR
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET N-CH 50V 8.2A DPAK
|
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