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Model IRFR120NTRRPBF

Description N沟道 100V 9.4A

Brand: International Rectifier

Packaging DPAK-252

Delivery time

Packaging method Tape

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	100 V
Technical parameters/rated current:	9.10 A
Technical parameters/drain source resistance:	0.21 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	48 W
Technical parameters/product series:	IRFR120N
Technical parameters/Input capacitance:	330pF @25V
Technical parameters/drain source voltage (Vds):	100 V
Technical parameters/Leakage source breakdown voltage:	100 V
Technical parameters/Continuous drain current (Ids):	9.40 A
Technical parameters/rise time:	23.0 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	DPAK-252
Dimensions/Length:	6.73 mm
Dimensions/Height:	2.39 mm
Dimensions/Packaging:	DPAK-252
Physical parameters/operating temperature:	-55℃ ~ 175℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
IRFR120NPBF	International Rectifier	类似代替	TO-252-3	INFINEON IRFR120NPBF 晶体管, MOSFET, N沟道, 9.1 A, 100 V, 210 mohm, 10 V, 4 V	PDF
IRFR120NPBF	Infineon	类似代替	TO-252-3	INFINEON IRFR120NPBF 晶体管, MOSFET, N沟道, 9.1 A, 100 V, 210 mohm, 10 V, 4 V	PDF
IRFR120NTRPBF	IFA	类似代替		INFINEON IRFR120NTRPBF 晶体管, MOSFET, N沟道, 9.4 A, 100 V, 0.21 ohm, 10 V, 4 V	PDF
IRFR120NTRPBF	Infineon	类似代替	TO-252-3	INFINEON IRFR120NTRPBF 晶体管, MOSFET, N沟道, 9.4 A, 100 V, 0.21 ohm, 10 V, 4 V	PDF
IRFR120NTRPBF	International Rectifier	类似代替	TO-252-3	INFINEON IRFR120NTRPBF 晶体管, MOSFET, N沟道, 9.4 A, 100 V, 0.21 ohm, 10 V, 4 V	PDF