Technical parameters/drain source resistance: | 1.50 Ω |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 2.5 W |
|
Technical parameters/drain source voltage (Vds): | 200 V |
|
Technical parameters/Leakage source breakdown voltage: | 200 V |
|
Technical parameters/breakdown voltage of gate source: | ±30.0 V |
|
Technical parameters/Continuous drain current (Ids): | 2.70 A |
|
Technical parameters/Input capacitance (Ciss): | 225pF @25V(Vds) |
|
Technical parameters/dissipated power (Max): | 2.5W (Ta), 26W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-252-3 |
|
Dimensions/Packaging: | TO-252-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR210PBF
|
Vishay Semiconductor | 功能相似 | TO-252 |
功率MOSFET Power MOSFET
|
||
IRFR210PBF
|
Vishay Intertechnology | 功能相似 | TO-252 |
功率MOSFET Power MOSFET
|
||
IRFR210PBF
|
Vishay Siliconix | 功能相似 | TO-252-3 |
功率MOSFET Power MOSFET
|
||
IRFR210PBF
|
VISHAY | 功能相似 | TO-252-3 |
功率MOSFET Power MOSFET
|
||
IRFR210TRPBF
|
Vishay Intertechnology | 功能相似 | DPAK |
功率MOSFET Power MOSFET
|
||
IRFR210TRPBF
|
Vishay Siliconix | 功能相似 | TO-252-3 |
功率MOSFET Power MOSFET
|
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