Technical parameters/power supply voltage (DC): | 5.50V (max) |
|
Technical parameters/rise/fall time: | 8 ns |
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Technical parameters/number of output interfaces: | 2 |
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Technical parameters/output current: | 4 A |
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Technical parameters/dissipated power: | 0.8 W |
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Technical parameters/rise time: | 8 ns |
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Technical parameters/output current (Max): | 4 A |
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Technical parameters/descent time: | 8 ns |
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Technical parameters/descent time (Max): | 8 ns |
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Technical parameters/rise time (Max): | 8 ns |
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Technical parameters/operating temperature (Max): | 70 ℃ |
|
Technical parameters/operating temperature (Min): | 0 ℃ |
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Technical parameters/dissipated power (Max): | 800 mW |
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Technical parameters/power supply voltage: | 4.5V ~ 5.5V |
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Technical parameters/power supply voltage (Max): | 5.5 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 5 mm |
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Dimensions/Width: | 4 mm |
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Dimensions/Height: | 1.5 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | 0℃ ~ 125℃ (TJ) |
|
Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ISL6605CBZA
|
Intersil | 完全替代 | SOIC-8 |
同步整流MOSFET驱动器 Synchronous Rectified MOSFET Driver
|
||
ISL6605CBZR5168
|
Intersil | 完全替代 | SOIC-8 |
DRIVER 4A 2Out HI/LO SIDE INV/NON-INV 8Pin SOIC N T/R
|
||
|
|
Renesas Electronics | 完全替代 | SOIC-8 |
DRIVER 4A 2Out HI/LO SIDE INV/NON-INV 8Pin SOIC N T/R
|
||
ISL6609ACRZ-T
|
Renesas Electronics | 完全替代 | VQFN-8 |
同步整流MOSFET驱动器 Synchronous Rectified MOSFET Driver
|
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