Technical parameters/forward voltage: | 0.63 V |
|
Technical parameters/forward current: | 16000 mA |
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Technical parameters/forward current (Max): | 16000 mA |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | TO-220 |
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Dimensions/Packaging: | TO-220 |
|
Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Taiwan Semiconductor | 类似代替 | TO-220-2 |
MBR1050: 10 A 肖特基势垒整流器
|
||
|
|
Galaxy Semi-Conductor | 类似代替 | 2 |
MBR1050: 10 A 肖特基势垒整流器
|
||
|
|
EIC | 类似代替 |
MBR1050: 10 A 肖特基势垒整流器
|
|||
MBR1050
|
Diodes | 类似代替 | TO-220-2 |
MBR1050: 10 A 肖特基势垒整流器
|
||
MBR1050
|
Multicomp | 类似代替 | TO-220 |
MBR1050: 10 A 肖特基势垒整流器
|
||
|
|
Panjit | 类似代替 | TO-220 |
MBR1050: 10 A 肖特基势垒整流器
|
||
MBR1050
|
Rochester | 类似代替 | TO-220 |
MBR1050: 10 A 肖特基势垒整流器
|
||
|
|
DIYI Electronic | 类似代替 | TO-220 |
MBR1050: 10 A 肖特基势垒整流器
|
||
MBR1050
|
ON Semiconductor | 类似代替 | TO-220-2 |
MBR1050: 10 A 肖特基势垒整流器
|
||
STPS1545D
|
ST Microelectronics | 功能相似 | TO-220-2 |
10A 至 16A,STMicroelectronics ### 二极管和整流器,STMicroelectronics
|
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