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Model SIHG460B-GE3
Description VISHAY SIHG460B-GE3 晶体管, MOSFET, N沟道, 20 A, 500 V, 0.2 ohm, 10 V, 2 V
Product QR code
Brand: Vishay Semiconductor
Packaging TO-247-3
Delivery time
Packaging method Bulk
Standard packaging quantity 1
11.17  yuan 11.17yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5339) Minimum order quantity(1)
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Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.2 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

278 W

 

Technical parameters/threshold voltage:

2 V

 

Technical parameters/drain source voltage (Vds):

500 V

 

Technical parameters/rise time:

31 ns

 

Technical parameters/Input capacitance (Ciss):

3094pF @10V(Vds)

 

Technical parameters/descent time:

56 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

278 W

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-247-3

 

Dimensions/Length:

15.87 mm

 

Dimensions/Width:

5.31 mm

 

Dimensions/Height:

20.82 mm

 

Dimensions/Packaging:

TO-247-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Packaging Methods:

Bulk

 

Other/Manufacturing Applications:

Industrial, Consumer Electronics, Power Management, Portable Devices

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IXFH21N50F IXFH21N50F IXYS Semiconductor 功能相似 TO-247-3
IXYS RF IXFH21N50F 晶体管, 射频FET, 500 V, 21 A, 300 W, 500 kHz, TO-247AD
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