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Model IXFN55N50F
Description IXYS RF IXFN55N50F 晶体管, 射频FET, 500 V, 55 A, 600 W, 500 kHz, SOT-227B
Product QR code
Brand: IXYS Semiconductor
Packaging SOT-227-4
Delivery time
Packaging method Tube
Standard packaging quantity 1
8.51  yuan 8.51yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9642) Minimum order quantity(1)
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Technical parameters/number of pins:

4

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

600 W

 

Technical parameters/drain source voltage (Vds):

500 V

 

Technical parameters/Continuous drain current (Ids):

55.0 A

 

Technical parameters/rise time:

20 ns

 

Technical parameters/Input capacitance (Ciss):

6700pF @25V(Vds)

 

Technical parameters/descent time:

9.6 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

600W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

4

 

Encapsulation parameters/Encapsulation:

SOT-227-4

 

Dimensions/Packaging:

SOT-227-4

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Other/Manufacturing Applications:

Industrial, Industry, Power Management, Power Management

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

Compliant with standard/REACH SVHC version:

2015/06/15

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IXFN80N50 IXFN80N50 IXYS Semiconductor 类似代替 SOT-227-4
IXYS SEMICONDUCTOR IXFN80N50 晶体管, MOSFET, HiPerFET, N沟道, 80 A, 500 V, 55 mohm, 10 V, 4.5 V
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