Chip AI consultant
Technical parameters/number of channels: | 1 |
|
Technical parameters/drain source resistance: | 160 mΩ |
|
Technical parameters/dissipated power: | 700 W |
|
Technical parameters/threshold voltage: | 6 V |
|
Technical parameters/drain source voltage (Vds): | 500 V |
|
Technical parameters/Leakage source breakdown voltage: | 500 V |
|
Technical parameters/rise time: | 50 ns |
|
Technical parameters/Input capacitance (Ciss): | 7000pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 700 W |
|
Technical parameters/descent time: | 42 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | 55 ℃ |
|
Technical parameters/dissipated power (Max): | 700W (Tc) |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-247-3 |
|
Dimensions/Length: | 16.13 mm |
|
Dimensions/Width: | 5.21 mm |
|
Dimensions/Height: | 21.34 mm |
|
Dimensions/Packaging: | TO-247-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFT42N50P2
|
IXYS Semiconductor | 功能相似 | TO-268-3 |
TO-268 N-CH 500V 42A
|
||
IXTK46N50L
|
IXYS Semiconductor | 功能相似 | TO-264-3 |
N-Channel Power MOSFET, IXYS Linear series N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability. ### MOSFET 晶体管，IXYS IXYS 的一系列高级离散电源 MOSFET 设备
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review