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Model IXYN82N120C3
Description IGBT 分立元件，IXYS XPT 系列 IXYS 的 XPT™ 系列分立件 IGBT 采用超轻穿通薄芯片技术，可降低热电阻和能源损耗。 这些设备提供快速切换时间，具有低尾线电流，并提供各种工业标准和专有封装。 高功率密度和低 VCE(sat) 方形反向偏置安全工作区域 (RBSOA) 高达额定击穿电压 短路容量，确保 10usec 正向通态电压温度系数 可选 Co-Pack Sonic-FRD™ 或 HiPerFRED™ 二极管 国际标准和专有高电压封装 ### IGBT 分立元件和模块，IXYS 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。
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Brand: IXYS Semiconductor
Packaging SOT-227-4
Delivery time
Packaging method Tube
Standard packaging quantity 1
226.47  yuan 226.47yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3892) Minimum order quantity(1)
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Technical parameters/breakdown voltage (collector emitter):

1200 V

 

Technical parameters/Input capacitance (Cies):

4.1nF @25V

 

Technical parameters/rated power (Max):

500 W

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

600 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

4

 

Encapsulation parameters/Encapsulation:

SOT-227-4

 

Dimensions/Length:

38.23 mm

 

Dimensions/Width:

25.07 mm

 

Dimensions/Height:

9.6 mm

 

Dimensions/Packaging:

SOT-227-4

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IXGN60N60C2 IXGN60N60C2 IXYS Semiconductor 功能相似 SOT-227-4
Trans IGBT Chip N-CH 600V 75A 4Pin SOT-227B
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