Technical parameters/dissipated power: | 350 mW |
|
Technical parameters/breakdown voltage: | 30 V |
|
Technical parameters/rated power (Max): | 350 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 350 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-226-3 |
|
Dimensions/Packaging: | TO-226-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANTXV2N5116
|
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Trans JFET P-CH
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JANTXV2N5116
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Microsemi | 功能相似 | TO-18 |
Trans JFET P-CH
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|
Philips | 功能相似 |
P-channel silicon field-effect transistors
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PMBFJ177
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NXP | 功能相似 | SOT-23-3 |
P-channel silicon field-effect transistors
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