Technical parameters/polarity: | PNP |
|
Technical parameters/breakdown voltage (collector emitter): | 60 V |
|
Technical parameters/Maximum allowable collector current: | 30A |
|
Technical parameters/minimum current amplification factor (hFE): | 15 @15A, 2V |
|
Technical parameters/rated power (Max): | 5 W |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 5000 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-204 |
|
Dimensions/Packaging: | TO-204 |
|
Physical parameters/materials: | Silicon |
|
Physical parameters/operating temperature: | -55℃ ~ 200℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tray |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4399
|
Boca Semiconductor | 完全替代 |
PNP大功率硅晶体管 PNP HIGH POWER SILICON TRANSISTOR
|
|||
2N4399
|
Quanzhou Jinmei Electronic | 完全替代 |
PNP大功率硅晶体管 PNP HIGH POWER SILICON TRANSISTOR
|
|||
2N4399
|
Comset Semiconductors | 完全替代 |
PNP大功率硅晶体管 PNP HIGH POWER SILICON TRANSISTOR
|
|||
|
|
Motorola | 完全替代 | TO-204 |
每PNP大功率硅晶体管合格MIL -PRF-四百三十三分之一万九千五 PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/433
|
||
JANTX2N4399
|
Aeroflex | 完全替代 |
每PNP大功率硅晶体管合格MIL -PRF-四百三十三分之一万九千五 PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/433
|
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