Technical parameters/tolerances: | ±5 % |
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Technical parameters/forward voltage: | 1.1V @200mA |
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Technical parameters/dissipated power: | 500 mW |
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Technical parameters/voltage regulation value: | 22 V |
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Technical parameters/rated power (Max): | 500 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | DO-35 |
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Dimensions/Packaging: | DO-35 |
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Physical parameters/operating temperature: | -65℃ ~ 175℃ |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Unspecified | 功能相似 |
DO-35 22V 0.5W(1/2W)
|
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|
|
Sensitron Semiconductor | 功能相似 | 2 |
DO-35 22V 0.5W(1/2W)
|
||
1N4115-1
|
Microsemi | 功能相似 | DO-35 |
DO-35 22V 0.5W(1/2W)
|
||
JAN1N4115C
|
Microsemi | 功能相似 | DO-35 |
硅400毫安低噪声齐纳二极管 SILICON 400mA LOW NOISE ZENER DIODES
|
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