Technical parameters/output current: | 4.7 mA |
|
Technical parameters/dissipated power: | 500 mW |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 500 mW |
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Technical parameters/accuracy: | ±10 % |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | DO-213AB |
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Dimensions/Packaging: | DO-213AB |
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Physical parameters/operating temperature: | -65℃ ~ 175℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANTX1N5314UR-1
|
Microsemi | 类似代替 | DO-213AB |
Current Regulator Diode, 4.7mA I(S), 2.9V V(L), Silicon, DO-213AB
|
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