Technical parameters/breakdown voltage (collector emitter): | 80 V |
|
Technical parameters/minimum current amplification factor (hFE): | 30 @250mA, 1V |
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Technical parameters/rated power (Max): | 3 W |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | TO-213 |
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Dimensions/Packaging: | TO-213 |
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Physical parameters/operating temperature: | -65℃ ~ 200℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3740
|
ETC | 功能相似 |
Trans GP BJT PNP 60V 4A 3Pin(2+Tab) TO-66 Sleeve
|
|||
2N3740
|
Microsemi | 功能相似 | TO-66-2 |
Trans GP BJT PNP 60V 4A 3Pin(2+Tab) TO-66 Sleeve
|
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