Technical parameters/dissipated power: | 4W (Ta), 125W (Tc) |
|
Technical parameters/drain source voltage (Vds): | 100 V |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 4W (Ta), 125W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-267 |
|
Dimensions/Packaging: | TO-267 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANS2N7236
|
IRF | 功能相似 |
TO-254AA P-CH 100V 18A
|
|||
|
|
Microsemi | 完全替代 | TO-267 |
单 P沟道 -100 V 125 W 60 nC 功率Mosfet 表面贴装 - SMD-1
|
||
JANTX2N7236U
|
Infineon | 完全替代 | SMD-1 |
单 P沟道 -100 V 125 W 60 nC 功率Mosfet 表面贴装 - SMD-1
|
||
|
|
Microsemi | 完全替代 | TO-254-3 |
Trans MOSFET P-CH 100V 18A 3Pin(3+Tab) TO-254AA
|
||
|
|
Microsemi | 功能相似 | TO-267 |
-100V Single P-Channel Hi-Rel MOSFET in a SMD-1 package
|
||
|
|
International Rectifier | 功能相似 | 3 |
-100V Single P-Channel Hi-Rel MOSFET in a SMD-1 package
|
||
JANTXV2N7236U
|
Infineon | 功能相似 | SMD-1 |
-100V Single P-Channel Hi-Rel MOSFET in a SMD-1 package
|
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