Technical parameters/breakdown voltage (collector emitter): | 80 V |
|
Technical parameters/minimum current amplification factor (hFE): | 40 @500mA, 5V |
|
Technical parameters/rated power (Max): | 25 W |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 25000 mW |
|
Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-66 |
|
Dimensions/Packaging: | TO-66 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -65℃ ~ 200℃ (TJ) |
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Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tray |
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Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3767LEADFREE
|
Central Semiconductor | 功能相似 | TO-66 |
TO-66 NPN 80V 4A
|
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