Technical parameters/rated voltage (DC): | 410 V |
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Technical parameters/rated current: | 15.0 A |
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Technical parameters/dissipated power: | 150000 mW |
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Technical parameters/rise time: | 4.50 ns |
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Technical parameters/breakdown voltage (collector emitter): | 440 V |
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Technical parameters/rated power (Max): | 150 W |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 150000 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Height: | 9.28 mm |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MGP15N40CL
|
ON Semiconductor | 功能相似 | TO-220-3 |
Insulated Gate Bipolar Transistor, 15A I(C), 380V V(BR)CES, N-Channel, TO-220AB
|
||
MGP15N40CLG
|
ON Semiconductor | 类似代替 | TO-220-3 |
点火IGBT 15安培， 410伏特N沟道TO- 220和D2PAK Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK
|
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