Technical parameters/number of pins: | 3 |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 50 W |
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Technical parameters/breakdown voltage (collector emitter): | 80 V |
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Technical parameters/Maximum allowable collector current: | 10A |
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Technical parameters/minimum current amplification factor (hFE): | 40 @4A, 1V |
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Technical parameters/rated power (Max): | 50 W |
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Technical parameters/DC current gain (hFE): | 40 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 50000 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJB44H11T4G
|
ON Semiconductor | 功能相似 | TO-263-3 |
ON SEMICONDUCTOR MJB44H11T4G 单晶体管 双极, NPN, 80 V, 50 MHz, 50 W, 10 A, 40 hFE
|
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