Technical parameters/rated power: | 1.5 W |
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Technical parameters/polarity: | PNP |
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Technical parameters/breakdown voltage (collector emitter): | 100 V |
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Technical parameters/Maximum allowable collector current: | 8000mA |
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Technical parameters/minimum current amplification factor (hFE): | 1000 |
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Technical parameters/maximum current amplification factor (hFE): | 12000 |
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Encapsulation parameters/Encapsulation: | TO-252-2 |
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Dimensions/Packaging: | TO-252-2 |
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Other/Minimum Packaging: | 2500 |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJD127G
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ON Semiconductor | 类似代替 | TO-252-3 |
PNP 复合晶体管,On Semiconductor ### 标准 带 S 或 NSV 前缀的制造商部件号具有汽车资格,符合 AEC-Q101 标准。 ### 双极性晶体管,On Semiconductor ON Semiconductor 的各种双极晶体管,包括以下类别: 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声,双匹配和复杂的双极晶体管
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Motorola | 类似代替 |
ON SEMICONDUCTOR MJD127T4G 单晶体管 双极, 达林顿, PNP, -100 V, 4 MHz, 20 W, -8 A, 2500 hFE
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