Technical parameters/rated voltage (DC): | -300 V |
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Technical parameters/rated current: | -500 mA |
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Technical parameters/number of pins: | 3 |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 20 W |
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Technical parameters/breakdown voltage (collector emitter): | 300 V |
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Technical parameters/Maximum allowable collector current: | 0.5A |
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Technical parameters/minimum current amplification factor (hFE): | 30 @50mA, 10V |
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Technical parameters/maximum current amplification factor (hFE): | 240 |
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Technical parameters/rated power (Max): | 20 W |
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Technical parameters/DC current gain (hFE): | 30 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 20000 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-126-3 |
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Dimensions/Length: | 8 mm |
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Dimensions/Width: | 3.25 mm |
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Dimensions/Height: | 11 mm |
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Dimensions/Packaging: | TO-126-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2015/06/15 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJE350STU
|
ON Semiconductor | 类似代替 | TO-126-3 |
ON Semiconductor MJE350STU , PNP 晶体管, 500 mA, Vce=300 V, HFE:30, 3引脚 TO-126封装
|
||
MJE350STU
|
Fairchild | 类似代替 | TO-126-3 |
ON Semiconductor MJE350STU , PNP 晶体管, 500 mA, Vce=300 V, HFE:30, 3引脚 TO-126封装
|
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