Technical parameters/rated voltage (DC): | 40.0 V |
|
Technical parameters/rated current: | 4.00 A |
|
Technical parameters/breakdown voltage (collector emitter): | 40 V |
|
Technical parameters/minimum current amplification factor (hFE): | 40 @1A, 1V |
|
Technical parameters/rated power (Max): | 40 W |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | TO-126-3 |
|
Dimensions/Packaging: | TO-126-3 |
|
Physical parameters/operating temperature: | -65℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BDW42
|
ON Semiconductor | 功能相似 | TO-220-3 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
|
||
|
|
Central Semiconductor | 功能相似 |
Leaded Power Transistor General PurposeO
|
|||
MJE521
|
ON Semiconductor | 功能相似 | TO-126-3 |
Leaded Power Transistor General PurposeO
|
||
MJE521
|
ST Microelectronics | 功能相似 | SOT-32-3 |
Leaded Power Transistor General PurposeO
|
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