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Specification parameters
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Technical parameters/operating voltage:

10V ~ 36V

Technical parameters/output current:

25.0 mA

Technical parameters/power supply current:

5 mA

Technical parameters/number of circuits:

Technical parameters/number of channels:

Technical parameters/number of pins:

Technical parameters/dissipated power:

380 mW

Technical parameters/Common Mode Rejection Ratio:

80 dB

Technical parameters/input compensation drift:

3.00 µV/K

Technical parameters/bandwidth:

5 MHz

Technical parameters/conversion rate:

12.0 V/μs

Technical parameters/gain bandwidth product:

5 MHz

Technical parameters/input compensation voltage:

3 mV

Technical parameters/input bias current:

30 pA

Technical parameters/operating temperature (Max):

70 ℃

Technical parameters/operating temperature (Min):

0 ℃

Technical parameters/gain bandwidth:

5 MHz

Technical parameters/dissipated power (Max):

380 mW

Technical parameters/Common Mode Rejection Ratio (Min):

80 dB

Technical parameters/power supply voltage:

10V ~ 36V

Technical parameters/power supply voltage (Max):

36 V

Technical parameters/power supply voltage (Min):

10 V

Encapsulation parameters/installation method:

Surface Mount

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

SOIC-8

Dimensions/Length:

4.9 mm

Dimensions/Width:

3.9 mm

Dimensions/Height:

1.45 mm

Dimensions/Packaging:

SOIC-8

Physical

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
LF356M	National	完全替代		TEXAS INSTRUMENTS LF356M 运算放大器, 单路, 5 MHz, 1个放大器, 12 V/µs, 10V 至 36V, SOIC, 8 引脚	PDF
LF356M	TI	完全替代	SOIC-8	TEXAS INSTRUMENTS LF356M 运算放大器, 单路, 5 MHz, 1个放大器, 12 V/µs, 10V 至 36V, SOIC, 8 引脚
LF356MX	National Semiconductor	完全替代	SOP-8	JFET输入运算放大器 JFET Input Operational Amplifiers	PDF
LF356MX/NOPB	National Semiconductor	完全替代	SOIC-8	TEXAS INSTRUMENTS LF356MX/NOPB 运算放大器, 单路, 5 MHz, 1个放大器, 12 V/µs, 10V 至 36V, SOIC, 8 引脚	PDF

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