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Model MMBT5550LT1G
Description ON SEMICONDUCTOR MMBT5550LT1G 单晶体管 双极, 通用, NPN, 140 V, 225 mW, 600 mA, 250 hFE
Product QR code
Brand: ON Semiconductor
Packaging SOT-23-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.1  yuan 0.1yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4615) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

140 V

 

Technical parameters/rated current:

600 mA

 

Technical parameters/number of pins:

3

 

Technical parameters/polarity:

NPN

 

Technical parameters/dissipated power:

225 mW

 

Technical parameters/breakdown voltage (collector emitter):

140 V

 

Technical parameters/Maximum allowable collector current:

0.6A

 

Technical parameters/minimum current amplification factor (hFE):

60 @10mA, 5V

 

Technical parameters/rated power (Max):

225 mW

 

Technical parameters/DC current gain (hFE):

250

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

300 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-23-3

 

Dimensions/Length:

3.04 mm

 

Dimensions/Width:

1.4 mm

 

Dimensions/Height:

1.01 mm

 

Dimensions/Packaging:

SOT-23-3

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Power Management, Automotive, Power Management, Industrial, Industrial, Automotive

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

Compliant with standard/RE

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