Technical parameters/tolerances: | ±5 % |
|
Technical parameters/forward voltage: | 900mV @10mA |
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Technical parameters/dissipated power: | 350 mW |
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Technical parameters/test current: | 20 mA |
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Technical parameters/voltage regulation value: | 5.1 V |
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Technical parameters/forward voltage (Max): | 900mV @10mA |
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Technical parameters/rated power (Max): | 350 mW |
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Technical parameters/dissipated power (Max): | 350 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBZ5231B
|
Fairchild | 完全替代 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBZ5231B 单管二极管 齐纳, 5.1 V, 350 mW, SOT-23, 5 %, 3 引脚, 150 °C
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Silicon Standard | 完全替代 |
FAIRCHILD SEMICONDUCTOR MMBZ5231B 单管二极管 齐纳, 5.1 V, 350 mW, SOT-23, 5 %, 3 引脚, 150 °C
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General Semiconductor | 完全替代 |
FAIRCHILD SEMICONDUCTOR MMBZ5231B 单管二极管 齐纳, 5.1 V, 350 mW, SOT-23, 5 %, 3 引脚, 150 °C
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Taiwan Semiconductor | 完全替代 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBZ5231B 单管二极管 齐纳, 5.1 V, 350 mW, SOT-23, 5 %, 3 引脚, 150 °C
|
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MMBZ5231B
|
ON Semiconductor | 完全替代 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBZ5231B 单管二极管 齐纳, 5.1 V, 350 mW, SOT-23, 5 %, 3 引脚, 150 °C
|
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