Technical parameters/rated voltage (DC): | 28.0 V |
|
Technical parameters/tolerances: | ±5 % |
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Technical parameters/rated power: | 350 mW |
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Technical parameters/breakdown voltage: | 15.0 V |
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Technical parameters/forward voltage: | 900mV @10mA |
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Technical parameters/dissipated power: | 350 mW |
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Technical parameters/test current: | 4.5 mA |
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Technical parameters/voltage regulation value: | 28 V |
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Technical parameters/forward voltage (Max): | 900mV @10mA |
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Technical parameters/rated power (Max): | 350 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | 55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Length: | 2.92 mm |
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Dimensions/Width: | 1.3 mm |
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Dimensions/Height: | 0.93 mm |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
|
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Vishay Siliconix | 功能相似 |
500mW,TZM52xxB 系列,Vishay Semiconductor 小信号齐纳二极管 超剧烈反向特性 非常高的稳定性 低反向电流电平 容差 ±5% 符合 AEC-Q101 ### 齐纳二极管,Vishay Semiconductor
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