Technical parameters/power supply current: | 700 µA |
|
Technical parameters/number of circuits: | 2 |
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Technical parameters/dissipated power: | 450 mW |
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Technical parameters/gain bandwidth product: | 1.1 MHz |
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Technical parameters/input compensation voltage: | 2 mV |
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Technical parameters/input bias current: | 20 nA |
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Technical parameters/operating temperature (Max): | 70 ℃ |
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Technical parameters/operating temperature (Min): | 0 ℃ |
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Technical parameters/gain bandwidth: | 1.1 MHz |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 4.9 mm |
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Dimensions/Width: | 3.9 mm |
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Dimensions/Height: | 1.38 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | 0℃ ~ 70℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
LM358DR
|
Chipswinner | 功能相似 | SOP-8L/-40~85 |
TEXAS INSTRUMENTS LM358DR 运算放大器, 双路, 700 kHz, 2个放大器, 0.4 V/µs, ± 1.5V 至 ± 16V, SOIC, 8 引脚
|
||
LM358DR
|
ROHM Semiconductor | 功能相似 | SOIC-8 |
TEXAS INSTRUMENTS LM358DR 运算放大器, 双路, 700 kHz, 2个放大器, 0.4 V/µs, ± 1.5V 至 ± 16V, SOIC, 8 引脚
|
||
LM358DT
|
ROHM Semiconductor | 类似代替 | SOIC-8 |
STMICROELECTRONICS LM358DT 运算放大器, 双路, 1.1 MHz, 2个放大器, 0.6 V/µs, 3V 至 30V, SOIC, 8 引脚
|
||
LM358DT
|
ST Microelectronics | 类似代替 | SOIC-8 |
STMICROELECTRONICS LM358DT 运算放大器, 双路, 1.1 MHz, 2个放大器, 0.6 V/µs, 3V 至 30V, SOIC, 8 引脚
|
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