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Model MMRF5014HR5
Description RF Power Transistor,1 to 2700MHz, 125W, Typ Gain in dB is 16 @ 2500MHz, 50V, GaN, SOT1791
Product QR code
Brand: NXP
Packaging NI-360H-2SB
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
3561.87  yuan 3561.87yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2702) Minimum order quantity(1)
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Technical parameters/frequency:

2.5 GHz

 

Technical parameters/dissipated power:

232000 mW

 

Technical parameters/output power:

125 W

 

Technical parameters/gain:

18 dB

 

Technical parameters/test current:

350 mA

 

Technical parameters/Input capacitance (Ciss):

51pF @50V(Vds)

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

232000 mW

 

Technical parameters/rated voltage:

125 V

 

Technical parameters/power supply voltage:

50 V

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

NI-360H-2SB

 

Dimensions/Packaging:

NI-360H-2SB

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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