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Specification parameters
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Technical parameters/output current:

≤30 mA

Technical parameters/power supply current:

950 µA

Technical parameters/number of circuits:

Technical parameters/number of channels:

Technical parameters/dissipated power:

725 mW

Technical parameters/Common Mode Rejection Ratio:

65 dB

Technical parameters/input compensation drift:

1.80 µV/K

Technical parameters/bandwidth:

1.70 MHz

Technical parameters/conversion rate:

3.60 V/μs

Technical parameters/gain bandwidth product:

2.2 MHz

Technical parameters/input compensation voltage:

900 µV

Technical parameters/input bias current:

.7 pA

Technical parameters/operating temperature (Max):

70 ℃

Technical parameters/operating temperature (Min):

0 ℃

Technical parameters/dissipated power (Max):

725 mW

Technical parameters/Common Mode Rejection Ratio (Min):

65 dB

Technical parameters/power supply voltage (Max):

16 V

Technical parameters/power supply voltage (Min):

3 V

Encapsulation parameters/installation method:

Surface Mount

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

SOIC-8

Dimensions/Length:

4.9 mm

Dimensions/Width:

3.91 mm

Dimensions/Height:

1.5 mm

Dimensions/Packaging:

SOIC-8

Physical parameters/operating temperature:

0℃ ~ 70℃

Other/Product Lifecycle:

Active

Other/Packaging Methods:

Tape & Reel (TR)

Compliant with standards/RoHS standards:

RoHS Compliant

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
TLC272ACD	National Semiconductor	类似代替		TEXAS INSTRUMENTS TLC272ACD 运算放大器, 双路, 1.7 MHz, 2个放大器, 3.6 V/µs, 3V 至 16V, SOIC, 8 引脚	PDF
TLC272ACD	TI	类似代替	SOIC-8	TEXAS INSTRUMENTS TLC272ACD 运算放大器, 双路, 1.7 MHz, 2个放大器, 3.6 V/µs, 3V 至 16V, SOIC, 8 引脚
TLC272ACDR	TI	类似代替	SOIC-8	TEXAS INSTRUMENTS TLC272ACDR 运算放大器, 双路, 1.7 MHz, 2个放大器, 3.6 V/µs, 3V 至 16V, SOIC, 8 引脚

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