Technical parameters/polarity: | N-CH |
|
Technical parameters/drain source voltage (Vds): | 60 V |
|
Technical parameters/Continuous drain current (Ids): | 7.7A |
|
Technical parameters/rise time: | 50 ns |
|
Technical parameters/Input capacitance (Ciss): | 300pF @25V(Vds) |
|
Technical parameters/descent time: | 19 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 2500 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | DPAK-252 |
|
Dimensions/Packaging: | DPAK-252 |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
IRF | 功能相似 |
INFINEON IRF2804PBF 晶体管, MOSFET, N沟道, 280 A, 40 V, 2.3 mohm, 10 V, 4 V
|
|||
IRF2804PBF
|
Infineon | 功能相似 | TO-220-3 |
INFINEON IRF2804PBF 晶体管, MOSFET, N沟道, 280 A, 40 V, 2.3 mohm, 10 V, 4 V
|
||
IRF2804PBF
|
International Rectifier | 功能相似 | TO-220-3 |
INFINEON IRF2804PBF 晶体管, MOSFET, N沟道, 280 A, 40 V, 2.3 mohm, 10 V, 4 V
|
||
IRF3710PBF
|
International | 功能相似 | Through Hole |
INFINEON IRF3710PBF 晶体管, MOSFET, N沟道, 46 A, 100 V, 0.023 ohm, 10 V, 4 V
|
||
IRF3710PBF
|
IFC | 功能相似 |
INFINEON IRF3710PBF 晶体管, MOSFET, N沟道, 46 A, 100 V, 0.023 ohm, 10 V, 4 V
|
|||
IRF3710PBF
|
IFA | 功能相似 |
INFINEON IRF3710PBF 晶体管, MOSFET, N沟道, 46 A, 100 V, 0.023 ohm, 10 V, 4 V
|
|||
IRFR014PBF
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET N-CH 60V 7.7A DPAK
|
||
IRFR014PBF
|
Vishay Intertechnology | 完全替代 | TO-252 |
MOSFET N-CH 60V 7.7A DPAK
|
||
IRFR014PBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET N-CH 60V 7.7A DPAK
|
||
IRFR014PBF
|
Kersemi Electronic | 完全替代 |
MOSFET N-CH 60V 7.7A DPAK
|
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